周鹏
电话：65642198
邮箱：pengzhou@fudan.edu.cn
地址：必赢电子游戏网站邯郸校区微电子学楼401室
研究所：微纳电子器件研究所
研究方向：
新型二维层状半导体电子器件与特性研究
下一代CMOS兼容非易失存储器研究
教育背景：
必赢电子游戏网站，物理学，博士
学术经历：
2013年12月-至今必赢电子游戏网站，微电子学院，教授
2008年05月-2013年12月必赢电子游戏网站，微电子学院，副研究员
2006年08月-2007年07月韩国，首尔国立大学，访问学者
2005年07月-2008年04月必赢电子游戏网站，微电子学院，助理研究员
2000年07月-2005年06月必赢电子游戏网站，信息科学与工程学院
1996年07月-2000年06月必赢电子游戏网站，物理学系
荣誉称号：
上海市青年科技杰出贡献奖，2020
国家杰出青年科学基金获得者，2019
上海市曙光学者，2018
科技部中青年领军人才，2018
国家自然基金委优秀青年，2016
上海市科技启明星，2013
必赢电子游戏网站卓学人才
代表性论文：
1. Lan Liu, Chunsen Liu, Lilai Jiang, Jiayi Li, Yi Ding, Shuiyuan Wang, Yu-Gang Jiang, Ya-Bin Sun, Jianlu Wang, Shiyou Chen (陈时友)*, David Wei Zhang, and Peng Zhou（周鹏）*，Ultrafast non-volatile flash memory based on van der Waals heterostructures， (Nature Nanotechnology, 1-8, 2021). （通讯作者）
2. Huawei Chen, Xiaoyong Xue, Chunsen Liu, Jinbei Fang, Zhen Wang, Jianlu Wang, David Wei Zhang, Weida Hu (胡伟达)*, and Peng Zhou（周鹏）*, Logic gates based on neuristors made from two-dimensional materials, (Nature Electronics, 1-6, 2021) （通讯作者）
3. Yunfeng Chen, Yang Wang, Zhen Wang, Yue Gu, Yan Ye, Xuliang Chai, Jiafu Ye, Yan Chen, Runzhang Xie, Yi Zhou, Zhigao Hu, Qing Li, Lili Zhang, Fang Wang, Peng Wang, Jinshui Miao, Jianlu Wang, Xiaoshuang Chen, Wei Lu, Peng Zhou（周鹏）*, and Weida Hu (胡伟达)*, Unipolar barrier photodetectors based on van der Waals heterostructures, (Nature Electronics, 4, 357-363, 2021). （通讯作者）
4. Shuiyuan Wang, Lan Liu, Lurong Gan, Huawei Chen, Xiang Hou, Yi Ding, Shunli Ma, David Wei Zhang, and Peng Zhou（周鹏）*, Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing, (Nature Communications, 12, 1-9, 2021). （通讯作者）
5. Yin Wang, Hongwei Tang, Yufeng Xie, Xinyu Chen, Shunli Ma, Zhengzong Sun, Qingqing Sun, Lin Chen, Hao Zhu, Jing Wan, Zihan Xu, David Wei Zhang, Peng Zhou（周鹏）*, and Wenzhong Bao(包文中)*, An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations, (Nature Communications, 12, 1-8, 2021). （通讯作者）
6. Zhaowu Tang, Chunsen Liu(刘春森)*, Xiaohe Huang, Senfeng Zeng, Liwei Liu, Jiayi Li, Yu-Gang Jiang, David Wei Zhang, and Peng Zhou（周鹏）*, A steep-slope MoS2/graphene dirac-source field-effect transistor with a large drive current, (Nano Letters, 21, 1758-1764, 2021). （通讯作者）
7. Xiaohe Huang, Chunsen Liu, Zhaowu Tang, Senfeng Zeng, Liwei Liu, Xiang Hou, Huawei Chen, Jiayi Li, Yu-Gang Jiang, David Wei Zhang, and Peng Zhou（周鹏）*, High drive and low leakage current MBC FET with channel thickness 1.2nm/0.6nm, (IEEE International Electron Devices Meeting (IEDM), IEEE, 12.1. 1-12.1. 4, 2020). （通讯作者）
8. Chunsen Liu, Huawei Chen, Shuiyuan Wang, Qi Liu, Yu-Gang Jiang, David Wei Zhang, Ming Liu, and Peng Zhou（周鹏）*, Two-dimensional materials for next-generation computing technologies, (Nature Nanotechnology, 15, 545-557, 2020). （通讯作者）
9. Guangjian Wu, Bobo Tian, Lan Liu, Wei Lv, Shuang Wu, Xudong Wang, Yan Chen, Jingyu Li, Zhen Wang, Shuaiqin Wu, Hong Shen, Tie Lin, Peng Zhou（周鹏）*, Qi Liu, Chungang Duan, Shantao Zhang, Xiangjian Meng, Shiwei Wu, Weida Hu, Xinran Wang, Junhao Chu and Jianlu Wang(王建禄)*, Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains, (Nature Electronics, 3, 43-50, 2020). （通讯作者）
10. Shuiyuan Wang, Chunsheng Chen, Zhihao Yu, Yongli He, Xiaoyao Chen, Qing Wan, Yi Shi, David Wei Zhang, Hao Zhou, Xinran Wang(王欣然)*, and Peng Zhou（周鹏）*, A MoS2/PTCDA hybrid heterojunction synapse with efficient photoelectric dual modulation and versatility, (Advanced Materials, 31, 1806227, 2019). （通讯作者）
11. Jiayi Li, Jingyu Li, Yi Ding, Chunsen Liu, Xiang Hou, Huawei Chen, Yan Xiong, David Wei Zhang, Yang Chai, and Peng Zhou（周鹏）*, Highly area-efficient low-power SRAM cell with 2 transistors and 2 resistors, (IEEE International Electron Devices Meeting (IEDM), IEEE, 23.3. 1-23.3. 4, 2019). （通讯作者）
12. Chunsen Liu, Huawei Chen, Xiang Hou, Heng Zhang, Jun Han, Yu-Gang Jiang, Xiaoyang Zeng, David Wei Zhang(张卫)*, and Peng Zhou（周鹏）*, Small footprint transistor architecture for photoswitching logic and in situ memory, (Nature Nanotechnology, 14, 662-667, 2019). （通讯作者）
13. Qilin Hua, Huaqiang Wu(吴华强)*, Bin Gao(高滨)*, Meiran Zhao, Yujia Li, Xinyi Li, Xiang Hou, Meng-Fan (Marvin) Chang, Peng Zhou（周鹏）*, and He Qian, A threshold switching selector based on highly ordered Ag nanodots for X-point memory applications, (Advanced Science, 6, 1900024, 2019). （通讯作者）
14. Chunsen Liu, Xiao Yan, Xiongfei Song, Shijin Ding, David Wei Zhang(张卫)* and Peng Zhou（周鹏）*, A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications, (Nature Nanotechnology, 13, 404-410, 2018). （通讯作者）
15. Huawei Chen, Yantao Chen, Heng Zhang, David Wei Zhang, Peng Zhou（周鹏）*, and Jia Huang(黄佳)*, Suspended SnS2 layers by light assistance for ultrasensitive ammonia detection at room temperature, (Advanced Functional Materials, 28, 1801035， 2018).（通讯作者）
16. Xiao Yan, David Wei Zhang，Chunsen Liu, Wenzhong Bao, Shuiyuan Wang, Shijin Ding， Gengfeng Zheng and Peng Zhou（周鹏）*, High performance amplifier element realization via MoS2/GaTe heterostructures, (Advanced Science, 5, 1700830, 2018). （通信作者）
17. Xiao Yan, Chunsen Liu, Chao Li, Wengzhong Bao, Shijin Ding, David Wei Zhang and Peng Zhou（周鹏）*, Tunable SnSe2/WSe2 heterostructure tunneling field effect transitor, (Small, 13, 1701478, 2017). （通信作者）
18. Ziwen Wang, Zhongying Xue, Miao Zhang, Yongqiang Wang, Xiaoming Xie, Paul K. Chu, Peng Zhou（周鹏）*, Zengfeng Di(狄增峰)*, and Xi Wang, Germanium-assisted direct growth of graphene on arbitrary dielectric substrates for heating devices, (Small, 13, 1700929, 2017). （通信作者）
19. Enze Zhang, Weiyi Wang, Cheng Zhang, Yibo Jin, Guodong Zhu, Qingqing Sun, David Wei Zhang, Peng Zhou（周鹏）*, and Faxian Xiu(修发贤)*, Tunable charge-trap memory based on few-layer MoS2, (ACS Nano, 9, 612-619, 2015). （通信作者）
20. Qingqing Sun(孙清清)*, Jingjing Gu, Lin Chen, Peng Zhou（周鹏）*, Pengfei Wang, Shijin Ding, and David Wei Zhang, Controllable filament with electric field engineering for resistive switching uniformity, (IEEE Electron Device Letters, 32, 1167-1169, 2011). （通信作者）
21. Peng Zhou（周鹏）*, Ming Yin, Haijun Wan, Hangbing Lv, Tingao Tang and Yinyin Lin, Role of TaON interface for CuxO resistive switching memory based on a combined model, (Applied Physics Letters, 94, 053510, 2009).
22. Hang-Bing Lv(吕杭炳)*, Peng Zhou（周鹏）*, Xiu-Feng Fu, Ming Yin, Ya-Li Song, Li Tang, Ting-Ao Tang, Yin-Yin Lin, Polarity-free resistive switching characteristics of CuxO films for non-volatile memory applications, (Chinese Physics Letters, 25, 1087-1090, 2008). （通信作者）
23. X. Wu, P. Zhou（周鹏）*, J. Li *, L.Y. Chen, H. B. Lv, Y. Y. Lin, and T. A. Tang, Reproducible unipolar resistance switching in stoichiometric ZrO2 films, (Applied Physics Letters ,90, 183507, 2007). （通信作者）
24. P. Zhou（周鹏）, Y. C. Shin, B. J. Choi, S. Choi, C. S. Hwang (黄哲盛)*, Y. Y. Lin, H. B. Lv, X. J. Yan, T. A. Tang, L. Y. Chen, and B. M. Chen, Dynamic threshold switching behavior of Ge2Sb2Te5 and Sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe, (Electrochemical and Solid-State Letters, 10, H281-H283, 2007).
25. P. Zhou（周鹏）, G. J. You, Y. G. Li, T. Han, J. Li, S.Y. Wang, L.Y. Chen, Y. Liu and S.X. Qian, Linear and ultrafast nonlinear optical response of Ag:Bi2O3 composite films, (Applied Physics Letters, 83, 3876-3878, 2003).
